Abstract
As extreme ultraviolet (EUV) lithography enters the commercialization phase with potential introduction at the 3x nm half-pitch node in 2013, the attention of advanced EUV resist research has turned to addressing patterning at 16-nm half pitch and below. Whereas line-edge roughness is the primary concern at 2x half pitch and larger, research at the 16-nm half pitch level is uncovering broader.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
