EUV resist sensitization and roughness improvement by PSCAR with in-line flood exposure system (Conference Presentation)

Satoshi Dei,Masafumi Hori,Foubert Philippe,Ryo Aizawa,Hiroyuki Ide,Hisashi Nakagawa,Gosuke Shiraishi,Kosuke Yoshihara,Seiji Nagahara,Seiichi Tagawa,Hideo Nakashima,Kathleen Nafus,Toru Kimura,Danilo De Simone,Kazuhiro Takeshita,Masaru Tomono,Masayuki Miyake,Teruhiko Moriya,Yoshihiro Kondo,Hayakawa Makoto,Yukie Minekawa,Ryo Shimada,Geert Vandenberghe,Yoshitaka Konishi,Takahiro Shiozawa,Takehiko Naruoka,John S Petersen ,Motoyuki Suzuki ,Takeharu Nagai ,Bálint Meliorisz ,Michael Carcasi ,Akira Oshima ,S Biesemans ,Keisuke Yoshida ,Masashi Enomoto ,Hans-Jürgen Stock ,Yuya Kamei ,Ken Maruyama

doi:10.1117/12.2297498

EUV resist sensitization and roughness improvement by PSCAR with in-line flood exposure system (Conference Presentation)

Satoshi Dei, Masafumi Hori + Show 36 more

https://doi.org/10.1117/12.2297498

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Publication Date: Mar 27, 2018

Citations: 1

Affiliation: IMEC, Tokyo Electron (Japan), JSR (Japan), Osaka University, Electron Optica (United States), Synopsys (Germany)

#UV Flood Exposure #Tokyo Electron + Show 8 more

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Abstract

Photosensitized Chemically Amplified ResistTM (PSCARTM) **2.0’s advantages and expectations are reviewed in this paper. Alpha PSCAR in-line UV exposure system (“Litho Enhancer”) was newly installed at imec in a Tokyo Electron Ltd. (TELTM)’s CLEAN TRACKTM LITHIUS ProTM Z connected to an ASML’s NXE:3300. Using the Litho Enhancer, PSCAR 2.0 sensitization preliminary results show that suppression of roughness enhancement may occur while sensitivity is increased. The calibrated PSCAR 2.0 simulator is used for prediction of resist formulation and process optimization. The simulation predicts that resist contrast enhancement could be realized by resist formulation and process optimization with UV flood exposure.

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