Abstract
In the last decade EUV sources attract interest from researchers over the world. One of the main motivations is EUV lithography, which could lead to further miniaturization in electronics. Nitrogen recombination laser at wavelength of 13.4 nm based on capillary discharge Z-pinch configuration could be used in experiments with testing of resolution of photoresist for EUV lithography (close to wavelength of 13.5 nm Si/Mo multilayer mirrors have a high reflectivity at normal incidence angles). In this work, pinching of nitrogen-filled capillary discharge is studied for the development of EUV laser, which is based on recombination pumping scheme. The goal of this study is achieving the required plasma conditions using a capillary discharge Z-pinch apparatus. In experiments with nitrogen, the capillary length was shortened from 232 mm to 90 mm and current quarter-period was changed from 60 ns to 50 ns in contrast with early experiments with Ne-like argon laser. EUV radiation from capillary discharge was registered by X-ray vacuum diode for different pressure, amplitude and duration of pre-pulse and charging voltage of the Marx generator.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Modern Physics: Conference Series
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
