Abstract
In this paper we discuss surface phenomena leading to contamination of multilayer optics designed for Extreme Ultraviolet (EUV) lithography. Experimental data supported by calculations indicate dramatic influence of resonance structure of EUV mirror on the secondary electron yield. These low energy electrons play an important role in radiation chemistry at the mirror surface. We also discuss the dependence on the partial pressure of admitted gas of equilibrium surface coverage and contamination rate under EUV irradiation.
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Schedule a callMore From: Bulletin of The Russian Academy of Sciences: Physics
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