Abstract

AbstractWe have developed an extreme ultraviolet (EUV) laser irradiation system at QST. EUV laser has a wavelength of 13.9 nm, and this laser wavelength is close to the wavelength of EUV lithography (λ = 13.5 nm). The irradiation system has an intensity monitor based on the Mo/Si multilayer beam splitter. This intensity monitor provides the irradiation energy onto the sample surface. So it is possible to examine and confirm damage/ablation thresholds of optical elements and doses for the sensitivity of resist materials, which have the same specifications of those in the EUV lithography.

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