Abstract
The results from ethene hydroformylation at 173°C showed that a Co(acac)3/SiO2 catalyst prepared from Co(acac)3 precursor by gas‐phase deposition was three times as active as a catalyst prepared by impregnation from cobalt nitrate, but oxo‐selectivities were similar. The high propanal selectivities on the Co(acac)3/SiO2 seem to be related to the presence of highly dispersed active sites favouring CO insertion. As dispersion is decreased from 23 to 8% due to increasing metal content (from 5 to 16 wt%), oxo‐selectivity decreased from 39 to 25%. The activity of Co(acac)3/SiO2 remained unchanged during 68 h on stream. The gas‐phase deposition technique described here is a promising method for the preparation of active, selective and stable heterogeneous hydroformylation catalysts.
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