Abstract
By controlling the hydrothermal time, porous In2O3 nanosheet-assembled micro-flowers were successfully synthesized by a one-step method. The crystal structure, microstructure, and internal structure of the prepared samples were represented by an x-ray structure diffractometry, scanning electron microscopy, and transmission electron microscopy, respectively. The characterization results showed that when the hydrothermal time was 8 h, the In2O3 nano materials presented a flower-like structure assembled by In2O3 porous nanosheets. After successfully preparing the In2O3 gas sensor, the gas sensing was fully studied. The results show that the In2O3 gas sensor had an excellent gas sensing response to ethanol, and the material prepared under 8 h hydrothermal conditions had the best gas sensing property. At the optimum working temperature of 270 °C, the highest response value could reach 66, with a response time of 12.4 s and recovery time of 10.4 s, respectively. In addition, the prepared In2O3 gas sensor had a wide detection range for ethanol concentration, and still had obvious response for 500 ppb ethanol. Furthermore, the gas sensing mechanism of In2O3 micro-flowers was also studied in detail.
Highlights
With the rapid development of social industry, the problem of gas pollution has become more and more serious
The results showed that the gas sensor for ethanol had excellent gas-sensing properties, in particular, the 3D In2 O3 flower porous material prepared under 8 h hydrothermal conditions had the best responses of ethanol and good selectivity, stability, and fast response and recovery time
We successfully synthesized porous In2 O3 nanosheets through the one-step hydrothermal method
Summary
With the rapid development of social industry, the problem of gas pollution has become more and more serious. Gas sensors made by semiconductors, especially metal oxide semiconductors (MOS), have attracted extensive attention due to their advantages of environmental protection, simple preparation, low cost, and good stability [12,13,14]. Among a large number of MOS materials, In2 O3 , as a typical n-type semiconductor material, has become a hot research topic due to its wide bandgap width and low resistivity, and has been widely used in liquid crystal devices, solar cells, and gas sensors [15,16,17]. By referring to the previous research results, it has been found that In2 O3 nanomaterials show good gas sensing response to both oxidation and reductive gases, so In2 O3 is a gas-sensitive material with great research potential
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