Abstract
This work reports on the integration of In2S3 material for use as an alcohol sensor. In2S3 thin films were deposited on glass substrates by spray pyrolysis technique. The morphology and microstructure of the obtained samples were characterized by XRD, SEM, TEM and EDX methods. The response to ethanol vapor at different concentrations was measured in the range of operating temperatures 250 °C–400 °C using DC electrical characterization. The In2S3 based sensor showed good sensitivity towards ethanol at optimal working temperature of 350 °C. The sensing mechanism of In2S3 semiconductor was developed on the bases of the reaction between the reducing ethanol vapors with the chemisorbed oxygen. The sensor rapidity, selectivity, stability and reproducibility were also studied.
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