Abstract
In this study, CF4-plasma was employed to improve the electrical performance of metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that CF4-plasma minimize effectively the trap-state density during etching surface of channel, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, low leakage current, and high on/off current ratio.
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