Abstract
Chemical etching employing specific etchants with varying etch times (20–60 s) has been successfully applied for the first time to reveal dislocation sites on the polished (1 0 0) faces of ammonium dihydrogen orthophosphate single crystals grown at ambient temperature, using a modified gel technique of double diffusion in a U-shaped beaker assembly. The selective behaviour of the etchant for straight and inclined dislocations has been demonstrated. Growth striations due to temperature fluctuations, low-angle tilt boundary and etch channels corresponding to stacking faults were clearly observed. Surface structures of the etched faces were photographed by optical and scanning electron microscopes and are discussed.
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