Abstract
A 50-mm diameter silicon carbide wafer thinning technique by means of a chemical reaction using a chlorine trifluoride (ClF3) gas was studied accounting for the gas distributor design and the total gas flow rate. The entire etching depth profile could become uniform with the increasing total gas flow rate at the fixed chlorine trifluoride gas concentration. A relationship between the pinhole arrangement of the gas distributor and the local etching rate profile was clarified by comparing the quick calculation and the measurement.
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