Etching of Si3N4 by SF6/H2 and SF6/D2 plasmas

Abstract

Selective plasma etching of silicon nitride (Si3N4) over silicon oxide (SiO2) is one of critical steps in the nanofabrication processes, where a direct plasma etching of Si3N4 is required for some applications. It was reported recently that Si3N4 etching by remote plasma source can be initiated by the vibrationally excited HF(v) molecules at the low concentration of atomic fluorine. Generally, the main source of HF(v) in plasma is reaction of atomic fluorine with H2 molecule. Due to this fact, the kinetic isotope effect should be observed during Si3N4 etching if replace the H2 source gas on deuterium gas (D2). The data presented here are the Si3N4 and SiO2 etching by the SF6/H2 and SF6/D2 plasmas. A different amount of H2 and D2 have been added to the SF6 discharge during the Si3N4 and SiO2 etching. It was shown that at low H2/D2 flow rate the Si3N4 etch rate is lower in the SF6/D2 discharge. This one confirms the hypothesis about Si3N4 etching by HF(v) and indicates on the fact that HF(v) gives contribution to Si3N4 etching by the direct plasma (not only by the remote plasma) at relatively high concentration of atomic fluorine.