Abstract
Etching of the GaAs(100) surface with aqueous ammonia solution is studied by highly surface-sensitive synchrotron-radiation photoemission spectroscopy. It is shown that such treatment effectively removes the native oxide layer leaving the surface covered with elemental arsenic, as well as arsenic hydroxides AsOH and As(OH)3, gallium hydroxide GaOH, and gallium suboxide GaxO. After annealing of the surface at 500 °C, the arsenic and gallium hydroxides disappear, while the excess arsenic is dimerized. The residual carbon contamination prevents disappearance of gallium hydroxide and hinders dimerization of excess arsenic on annealing. Rinsing the etched surface with 2-propanol instead of water prior to annealing results in considerable reduction of carbon contamination after annealing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
