Abstract
Isotopically enriched 10 boron for use in pillar-structured neutron detectors was successfully etched in an electron cyclotron resonance (ECR) plasma using SF 6 -based plasmas. The effects of radio frequency (RF) power, ECR power, gas flow rate, H 2 and O 2 incorporation into the plasma, and gas mixture ratios were examined. Etch rates up to approximately 1.35 μm/min were realized. In addition, etch morphology was examined, and the final shape of 10 boron-coated pillars could be controlled through the etch gas mixture utilized. Selectivity to the underlying Si structure was apparent from scanning electron microscopy (SEM) micrographs of completed etches.
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