Etching Kinetics of (100) Single Crystal Diamond Surfaces in a Hydrogen Microwave Plasma, Studied with In Situ Low‐Coherence Interferometry

Abstract

A low‐coherence interferometry (LCI) was used to measure in situ the etch rate (ER) of synthetic single crystal (SC) diamonds in H2 microwave plasma, at substrate temperatures in the broad range of 800–1370 °C. The method allows the collection of the kinetic data on a single sample without switching off the plasma. (100)‐orientated SC plates of CVD and IIa type HPHT diamond were systematically etched in pure hydrogen at pressure p = 130 Torr and microwave power density of ≈300 W cm−3. The activation energies Ea of 42 ± 5 and 32 ± 4 kCal mol−1 have been determined for the CVD and HPHT substrates. An enhanced etching rate of a subsurface defected layer with thickness of ∼1 μm or less, formed upon polishing of the samples, is revealed. Surface morphology, roughness, and the shape of etch pits produced by a selective etching of defects, were characterized with optical profilometry. CH and dimer C2 radicals were detected in the H2 plasma with optical emission spectroscopy, as a result of the diamond etching, and the emission intensity of these species was linked to the substrate etch rate.