Etching effects on machined surface characteristics of single crystal Si

Abstract

This paper demonstrates the wet etching effects on machined surface of single crystal Si. The machined surface was prepared by irradiating sample with low energy (~ 2keV) ECR sourced Ar⁺ ion beam. Then we performed etching process by HF(2.4%) at 20min,40min and 60min respectively. We analyzed surface of sample (before and after etching) by AFM and white light interferometer to measure surface roughness and machined depth. Finally we compared the etching effects on machining depth and surface roughness and result shows HF etching has remarkable effect i.e. increases both machining depth and surface roughness. Result also confirmed that etching effect can be controlled by etching time.