Abstract
The dependences of plasmas (CF 4 /D 2 and CF 4 /H 2 ) on etch rates of the PECVD SiN films at different substrate temperatures were investigated. The CF 4 /D 2 plasma exhibited higher etch rates than that for the CF 4 /D 2 plasma at room temperature and higher. The optical emission spectra showed that the CF polymerization, F and Balmer emissions were stronger in the CF 4 /D 2 plasma, by comparing with the CF 4 /H 2 plasma. A thinner fluorocarbon thickness with a lower F/C ratio was found in the sample proceeded by the CF 4 /H 2 plasma. The fluorocarbon thickness and gas phase concentration were not responsible for the increase of etch rate in the CF 4 /D 2 plasma. The abstraction of H inside the SiN films by deuterium and hydrogen dissociation were considered to be important for the etching of the Si- H bond rich SiN films.
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