Abstract
Etching characteristics of Pb{(Mg 1/3Nb 2/3) 0.9Ti 0.1}O 3 (PMN–PT) were studied by an inductively coupled plasma etcher using Ar, Cl 2, and BCl 3 gas combinations. Using Ar/BCl 3 and Cl 2/BCl 3, PMN–PT etch rates higher than 2500 Å/min could be obtained with the etch selectivity over photoresist higher than 1.0. In general, the increase of BCl 3 in Ar/BCl 3 and Cl 2/BCl 3 increased etch selectivity without decreasing PMN–PT etch rates significantly. X-Ray photoelectron spectroscopic analysis revealed that, during the PMN–PT etching, Ar ion bombardment enhanced the etching of Pb and Ti components preferentially, BCl 3 plasma enhanced the etching of O, Nb, and Mg components, and Cl 2 plasma enhanced the etching of Pb component. The etched profile angle of PMN–PT increased with the increase of PR selectivity.
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