Abstract
The investigation of Al 2O 3 etch characteristics in the BCl 3/Ar inductively coupled plasma was carried out in terms of effects of input process parameters (gas pressure, input power, bias power) on etch rate and etch selectivity over poly-Si and photoresist. It was found that, with the changes in gas pressure and input power, the Al 2O 3 etch rate follows the behavior of ion current density while the process rate is noticeably contributed by the chemical etch pathway. The influence of input power on the etch threshold may be connected with the concurrence of chemical and physical etch pathways in ion-assisted chemical reaction.
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