Abstract
The investigation of reactive-ion-etching (RIE) characteristics and mechanisms for Ti-Sb-Te (TST) new phase change material in CHF3/O2/Ar plasmas was carried out in this paper. The effects of three experimental parameters, gas ratio, gas pressure and input radio frequency (RF) power on variations of etch rate, surface root-mean-square (RMS) roughness and profile were investigated. Within the range of our experimental conditions, the maximum etch rate with ∼83 nm/min, a smooth surface with RMS less than 1 nm and a highly anisotropic profile are obtained using the optimized process conditions (8% oxygen content, input power of 300 W, gas pressure of 30 mTorr). The surface roughness is strongly reduced with the addition of oxygen, but sharply increased at higher gas pressure. Surface analysis using X-ray photoelectron spectroscopy (XPS) reveal that surface of etched TST film is mainly fluorinated by forming TiFx, SbFx, and TeFx. According to spectra of Sb 3d and Te 3d, a slight shift of peaks to a higher energies (∼0.6 eV) on the etched surface can be seen, indicting the surface degradation after etching process.
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