Abstract

The present work is concerned with the development of etch pits on (hk0) and (hh) silicon surfaces immersed in various etchants. Final shapes of small etch pits are found to be bounded by {111} facets solely. The orientation dependence of etching shapes is explained in terms of a kinematic and tensorial model involved in the simulator TENSOSIM. An agreement between experimental and theoretical etching shapes is observed showing that the simulator can generate quite accurate 3D etching shapes for pits blocked by limiting facets. After a fair adjustment of the database the simulator derives also etching shapes close to experimental shapes of large pits.

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