Abstract
n-Type 6H-SiC bulk crystals were etched by an electrochemical method using an aqueous KOH solution as an electrolyte. After etching using a 50 wt % KOH solution at room temperature, etched samples showed etch pits which are always pairs of a crescent (or a circle) shaped pit and a triangle-shaped pit. The paired pits align in the radial direction from the wafer center and the triangle pit is in the wafer perimeter side with its base facing the perimeter. From comparison with optical microscope observation and also with molten KOH etching, it was found that the origin of the electrochemically formed etch pits is not only micropipe but also some other kind of defects, which is most probably screw dislocation. © 2003 The Electrochemical Society. All rights reserved.
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