Abstract
Etch characteristics of magnetic tunnel junction (MTJ) stack masked with TiN films were investigated using an inductively coupled plasma reactive ion etcher in Cl 2/Ar and BCl 3/Ar gases for magnetic random access memory. The effect of etch gas on the etch profile of MTJ stacks was examined. As Cl 2 and BCl 3 concentrations increased, the etch slope of etched MTJ stack became slanted and the dimensional shrinkage was observed. A high degree of anisotropic etching of MTJ stacks was achieved using Cl 2/Ar gas at the optimized etch conditions.
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