Abstract
Reactive ion etching of ferroelectric (Bi 4 m x La x )Ti 3 O 12 (BLT) thin films has been studied using C 2 F 6 and HBr etch gases in an inductively coupled plasma (ICP). BLT thin films with bismuth layered-perovskite structure were prepared by chemical solution deposition method. Etch rate and etch selectivity of BLT films were investigated for each gas. The etch rate of 700∼900 Å were obtained for C 2 F 6 gas while the etch rate by HBr gas were in the range of 700∼1100 Å under the etch conditions used in this study. The etch profiles and surface morphologies of BLT films etched by each gas were observed using field emission scanning electron microscopy (FESEM). HBr chemistry turned out to be more effective in obtaining high etch rate and clean etch profile than C 2 F 6 chemistry.
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