Abstract
We propose a model to estimate the energy barrier responsible for the hysteresis of the thermally driven Mott phase transition. The fitting results are in good agreement with experimental data, where the associated barrier values for ${\mathrm{VO}}_{2}$ films with various hysteretic behavior are determined. For heating to a fixed temperature in the hysteresis, the electric pulse $(\ensuremath{\sim}100\phantom{\rule{0.16em}{0ex}}\mathrm{V}/\mathrm{cm})$ induced responses exhibit steps of the resistance in ${\mathrm{VO}}_{2}$ thin films, forming multiple nonvolatile states, whereas no remarkable changes occur for the cooling case. We propose that the memory ability can be attributed to the barrier in the hysteresis regime and the multilevel resistances induced electrically are associated with the configuration of the metal and insulator domains.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.