Estimation of the electronic straggling using delta-doped multilayers

Abstract

It is proposed that the electronic straggling of projectile ion beams for medium energy ion scattering spectroscopy (MEIS) can be estimated with delta-doped multilayers. From the depth dependence of the full width half maximum (FWHM) of the Ta peak of a Ta delta-doped Si multilayer, the electronic straggling of 100 keV H + in Si could be estimated. The electronic straggling can be estimated without information on the exact thickness and the interface abruptness of the Ta delta-doped multilayers. The reduced electronic straggling, Ω e /Ω B was estimated to be 0.59. With the experimentally determined electronic straggling, the thickness of the Ta delta layer could be estimated and compared with the nominal thickness based on the growth rate determined by transmission electron microscopy (TEM).