Estimation of the effective electron-capture cross section in the emission processes from arrays of vertically coupled InAs quantum dots in the n-GaAs matrix

Abstract

In the paper we investigate the processes of electron emission from arrays of vertically coupled InAs quantum dots in the space charge region of the Schottky barrier in the matrix of n- type of GaAs. We developed a model of thermally activated tunneling of charge carriers, which allows to calculate the parameters that characterize the processes of electron emission. The temperature dependence of the activation energy of the carriers, the ground state energy carrier in the quantum dot at different reverse bias voltage of the Schottky barrier, and the dependence of the electron-capture cross section on the binding energy of the quantum dot ground state were obtained. The comparison of the values performed for samples with different number of layers of quantum dots: 3, 6 or 10 layers.