Abstract

ABSTRACTGaAs films grown on exact (111) substrates in the reconstruction regime always show facets. We have studied the surfaces of these films with an atomic force microscope. The facets are composed of vicinal surfaces which are tilted by small angles (∼ 2°) from the exact (111) plane. From the geometry of the facet, average displacement of adatoms is calculated. The results indicate that the diffusion length under the growth condition is more than 0.2 μm.

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