Abstract
Described is an estimation technique of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET. Waveforms of the transient voltage pulses are fully estimated by using transient current data obtained in various drain voltage conditions. Modeling of the irradiated device behavior for use in device/circuit simulations is not required. The concept is validated using a 2-D mixed-mode device simulation.
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