Estimation of residual stress in Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayers deposited on silicon

Abstract

Thin multilayer films possess residual stress components which vary from microscopic to macroscopic scale. In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 (PZT-BFO) multilayer thin film is deposited via chemical solution deposition technique on silicon substrate. The microscopic and macroscopic residual stress components of the multilayer films are investigated. The average microscopic residual stress is estimated to be 791.15 MPa (tensile) by using x-ray diffraction technique; on the other hand, the average macroscopic stress is found to be 774.23 MPa (tensile) by using wafer curvature measurement technique. As the thermally grown SiO2 layer possesses compressive stress, the combined residual stress of the PZT-BFO multilayer and SiO2 will almost cancel each other. This is reasonably encouraging for integration of the multilayer in MEMS structures.