Estimation of Radiation Damage and Pattern Resolution in Ion Direct Writing Using Scattering of Low Energetic Ions

Abstract

An estimation of the radiation damage and pattern resolution in ion direct writing is presented by a Monte Carlo simulation of the slowing down and scattering of low-energy ions and recoiled atoms in an amorphous target. The simulation program is characterized by employing the power of a logarithm approximation as a screening function, the distance between collisions and a modified step length based on a binary collision model. Calculated results are in terms of radiation damage depth and fine pattern resolution using sputtering and radiation damage as a semiconductor fabrication technique. Consequently, available informations can be obtained as ion lithography using sputtering and radiation damage that has a much finer pattern resolution (less than a few 10s Å) than electron beam lithography using a latent resust image.