Abstract
Extreme ultraviolet (EUV) discharge-based lamps for EUV lithography need to generate extremely high power in the narrow spectrum band of 13.5±0.135 nm. A simplified collisional-radiative model and radiative transfer solution for an isotropic medium were utilized to investigate the wavelength-integrated light outputs in tin (Sn) plasma. Detailed calculations using the Hebrew University-Lawrence Livermore atomic code were employed for determination of necessary atomic data of the Sn4+ to Sn13+ charge states. The result of model is compared with experimental spectra from a Sn-based discharge-produced plasma. The analysis reveals that considerably larger efficiency compared to the so-called efficiency of a black-body radiator is formed for the electron density ≃1018 cm−3. For higher electron density, the spectral efficiency of Sn plasma reduces due to the saturation of resonance transitions.
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