Abstract
Cu(In,Ga)Se2 (CIGS) absorbers with several Ga/III, Ga/(In + Ga), profiles were fabricated by the so-called “multi layer precursor method” under the control of Ga flux rate during film's deposition. Open-circuit voltage (VOC) of CIGS solar cell is principally dependent on average band-gap energy (Eg) in space-change region (SCR) of below 1.3 eV. This average Eg in SCR, principally controlled by average Ga/III ratio in SCR, is estimated by the peak position of (220/204)-oriented CIGS films on soda-lime grass (SLG) substrates investigated by grazing incidence X-ray diffraction (GIXRD) with 0.1° incident angle, whereas the average Eg in SCR is predicted by Raman or photoluminescence (PL) peak positions of CIGS absorbers on both SLG and stainless steel (SUS) substrates. Ultimately, with the average Eg in SCR of below 1.3 eV, the (220/204) peak position (GIXRD) can be well used as a predictor of the VOC on rigid SLG substrates. On the other hand, Raman peak and PL peak positions can be well utilized as indicators of the VOC on not only rigid SLG but also flexible SUS substrates before solar cell fabrication. These are fast and non-destructive methods to evaluate the Ga content, Eg near CIGS surface, and corresponding VOC for high cell performance.
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