Abstract
A model of the estimation of the ferroelectric-based phase-shifter figure of merit concerning the material properties and phase-shifter design parameters is presented. The influence of ferroelectric material tunability and losses on phase-shifter characteristics are analyzed. Two approaches to phase-shifter design (transmission line and band-pass filter) are considered. The review of the published results on the ferroelectric phase-shifter design was performed to approve the method proposed. Recommendations to optimize the phase-shifter development process are suggested on the basis of the elaborated model and analysis performed.
Highlights
Phase-shifter can be considered a key element of modern microwave electronics.Excluding digital phase shifters, switching a different number of transmission line sections, there are several methods to design the phase-shifters with an analog control: tunable transmission lines, tunable wideband band-pass filters and reflection-type phase-shifters
One should note that the phase response of the transmission line-based phase-shifter changes slope with the tuning of the line [14,15,16,17,18,19,20,21,22,23]
Closed-form expressions for the insertion loss of the phase-shifter based on FE material are derived considering the two main design approaches: tunable ferroelectric-based transmission line and tunable band-pass filter on the base of FE capacitors
Summary
Phase-shifter can be considered a key element of modern microwave electronics.Excluding digital phase shifters, switching a different number of transmission line sections, there are several methods to design the phase-shifters with an analog control: tunable transmission lines (regular or periodically loaded), tunable wideband band-pass filters and reflection-type phase-shifters. Phase-shifter can be considered a key element of modern microwave electronics. The main characteristic of the yield of a phase-shifter is a figure of merit (FoM) defined as FoM = ∆φ L (1). Application of ferroelectric (FE) films for the microwave devices requires a preliminary estimation of the device’s parameters, relying on the electrophysical characteristics of the FE tunable element (capacitor) or the FE film itself, to choose the optimal design option. The estimation of FE films’ applicability from the point of their microwave properties is carried out based on the FE capacitor figure of merit (commutation quality factor (CQF)) proposed by Vendik [1,2,3,4,5]
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