Estimation of electron traps in carbon-60 field-effect transistors by a thermally stimulated current technique

Abstract

The authors investigated the influence of O2 and H2O molecules absorbed in carbon-60 (C60) films on their electron trap and n-type field-effect transistor (FET) characteristics. Electron traps in the C60 films were directly measured using a thermally stimulated current (TSC) technique. The TSC results demonstrate that the absorption of O2 and H2O molecules in the C60 films induced an increase in the electron trap concentration, which degrades C60 FET characteristics. By annealing the C60 films at 100°C for 8h, the electron trap concentrations were markedly lowered, enhancing the C60 FET characteristics. An electron mobility of 0.017cm2∕Vs and a current on/off ratio of 106 were observed from the degassed C60 FETs.