Abstract
A general method based on the valence band mixing is proposed to establish a correlation between electron spin polarization and the degree of circular polarization of luminescence in a strained quantum well (QW). Key issues that are critical for establishing such a correlation are highlighted by invoking 4 band k.p calculations in a strained QW system. The proposed method takes care of the complex valence band mixing in strained QWs by simultaneously analyzing the heavy hole (e-hh) and light hole (e-lh) related luminescence transitions along the quantization direction. It is shown that the ratio of the degree of circular polarizations measured for the e-hh and e-lh features is a sensitive probe to estimate the values of band mixing. The method is reasonably supported by carefully conducted experiments on a tensile strained GaAsP/AlGaAs QW sample in the temperature range of 10 to 150 K. The proposed method shall be helpful for understanding the spin injection/transfer across the interfaces of QW, especially for the cases where heavy hole-light hole coupling is expected to be strong, and both the features are experimentally observed. It might lead to new directions in the field of semiconductor spin-optoelectronics in QWs.
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