Abstract
Amorphous antimony films consisting of separate islands were deposited onto SiO x and GeO x film substrates at room temperature in a vacuum of 10 -5 Torr. By comparison of the interferometrically determined thickness and the total mass of incident vapour determined with a quartz oscillator, it was found that a sudden change in film density occurs at a certain film thickness d 0. Another change in film density, which is gradual, occurs in the vicinity of a certain thickness d c (d c > d 0 ) . The change at d 0 is caused by the coalescence of neighbouring islands. The change at d c, at which the coalescence of amorphous islands is almost completed, is associated with crystallization.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
