Abstract
To analyze crystal defects in polycrystalline silicon substrates, it is necessary to measure the crystal orientation at high speed. In this paper, we propose a method for simultaneous and fast estimation of the crystal orientation of an entire substrate by measuring the reflected light from a single rotation of a light source. The effectiveness of the proposed method is verified by the orientation estimation experiments. © 2022 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.
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