Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation

Abstract

Changes in the parameters of the crystal lattice and energy bands of CoSi2 nanofilms and nanocrystals formed in the surface Si layers by ion implantation combined with annealing are studied. It is shown that the band gap E g of CoSi2/Si(100) nanofilms with the thickness θ ≤ 40–50 A is higher by ∼0.1 eV than for “thick” films; in the case of nanocrystals, E g is 0.3–0.4 eV higher than for macrocrystals.