Estimating various losses in c-Si solar cells subjected to partial shading: insights into J–V performance reduction

Abstract

This article reports the effect of partial shading (PS) on the electrical output of a solar cell using the two-diode model. The reduction in electrical performance parameters induced by various recombination losses has been explained for c-Si solar cells under the effect of PS. The PS mainly affects the short-circuit current density $$({J}_{\mathrm{SC}})$$ and efficiency $$(\eta )$$ of the solar cells. $${J}_{\mathrm{SC }}$$ and $$\eta $$ decrease from 37.84 to 5.48 mA $$\hbox {cm}^{-2}$$ and from 18.31 to 2%, respectively. Among all the energy losses encountered for PS, spatial relaxation and recombination losses are the dominating factors responsible for the reduction in $${J}_{\mathrm{SC}}$$ . PC1D and Griddler simulations have been performed to evaluate the effect of front surface and bulk recombination. The PC1D simulated external quantum efficiency is governed by the front and back surface recombination velocity and carrier life time of the charge carriers under PS. The power loss ( $${P}_{\mathrm{e}}$$ ) of $${\sim }$$ 34% from the emitter region has been determined by resistance analysis in correlation with the recombination in the emitter region of the solar cells under PS.