Abstract
We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet–Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6±1 nm in semiconducting ITO at room temperature.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
