Abstract
Boron was ion implanted into /spl theta//spl deg/ off-angle crystalline silicon substrates with a tilt angle of /spl theta//spl deg/. It is assumed that the B profiles along the ion-beam direction are identical, enabling the lateral straggling of B ion implanted with a tilt angle of 0/spl deg/ to be evaluated experimentally for the first time. The measurements show that the lateral straggling of channeling ions is small.
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