Abstract
A method was developed to estimate EEPROM device life based on the consistency for breakdown charge, Q BD, for constant voltage time dependent dielectric breakdown (TDDB) and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, Q BD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, Δ Q FG, is measured, the lower limit of the EEPROM life can be related to Q BD/Δ Q FG. The method is reached by erase/write cycle tests on an EEPROM.
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