Establishment of Physical and Mathematical Models for Sr0.95Ba0.05TiO3Memristor

Abstract

The Sr[Formula: see text]Ba[Formula: see text]TiO3(SBT) memristor is prepared using the monolayer Sr[Formula: see text]Ba[Formula: see text]TiO3nano-film structure. In order to apply it into the nonlinear circuit design, the SBT memristor is modeled in the paper. The voltage-controlled physical model of the SBT memristor is established based on its working mechanism. Due to the difficulty in determining the accurate parameters of the voltage-controlled physical model, a flux-controlled mathematical model of the SBT memristor is proposed, and its equivalence relation with the voltage-controlled physical model is proved. Moreover, the parameters of the flux-controlled mathematical model are determined by means of the quadratic polynomial interpolation method using the experimentally measured voltage and current data of the SBT memristor. The simulated [Formula: see text]–[Formula: see text] characteristic curve using the flux-controlled mathematical model coincides well with the measured [Formula: see text]–[Formula: see text] characteristic curves. The result indicates that the flux-controlled mathematical model with the definite parameters can be used to characterize the behaviors of the physical SBT memristor and guide its application to nonlinear circuit design.