Abstract
A nine-layer WS2/MoS2 heterostructure is established on a sapphire substrate after sequential growth of large-area and uniform five- and four-layer MoS2 and WS2 films by using sulfurization of predeposited 1.0 nm molybdenum (Mo) and tungsten (W), respectively. By using the results obtained from the ultraviolet photoelectron spectroscopy and the absorption spectrum measurements of the standalone MoS2 and WS2 samples, a type-II band alignment is predicated for the WS2/MoS2 heterostructure. Increasing drain currents and enhanced field-effect mobility value of the transistor fabricated on the heterostructure suggested that a channel with higher electron concentration compared with the standalone MoS2 transistor channel is obtained with electron injection from WS2 to MoS2 under thermal equilibrium. Selective 2D crystal growth with (I) blank sapphire substrate, (II) standalone MoS2, (III) WS2/MoS2 heterostructure, and (IV) standalone WS2 was demonstrated on a single sapphire substrate. The results have revealed the potential of this growth technique for practical applications.
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