Abstract
Electron spin resonance of semiconductor-doped phosphate glasses has been measured at 77 K. Three types of signal are induced with precipitation of semiconductor nanocrystals in glass host materials. Two of them are attributed to glass defects around semiconductor nanocrystals and the other to S vacancies in CdS nanocrystals. The increase in electron spin resonance absorption with Ar-ion laser irradiation reveals that carriers photoexcited in nanocrystals are trapped not only on nanocrystal defects but also glass defects.
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