Abstract
The temperature dependence of ESR linewidth below the degeneracy temperature has been investigated in heavily phosphorus-doped silicon. The linewidth due to electron-phonon interaction is subtracted from the total linewidth. The remaining linewidths are analyzed by the formula γΔH = 1 (1 + ξ τ ) · 1 (T sl) which is derived from a coupled set of Bloch type equations of Hasegawa in the ‘bottleneck limit’ with a result that in the high concentration region ( n > 1 × 10 19cm −3) Ξ τ is negligible, whereas in the low concentration region ( n = 2.7 × 10 18 cm −3) the width is affected by the reducing factor 1 (1 + Ξ τ) which explains the observed temperature dependence.
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