Abstract
Measurements of the ESR linewidth of uncompensated Si:As close to ${n}_{c}$ for the metal-insulator transition have been made at 9.4 GHz in the temperature range 4.2-1.4 K. The linewidth exhibits a minimum value $\ensuremath{\Delta}{H}_{min}$ which occurs at $n={n}_{c}$ and an excess component [$\ensuremath{\Delta}{H}_{\mathrm{ex}}=\ensuremath{\Delta}H\ensuremath{-}\ensuremath{\Delta}{H}_{min}$] which exhibits scaling behavior of the form $B{(\frac{n}{{n}_{c}}\ensuremath{-}1)}^{p}$ for $ng{n}_{c}$. The scaling behavior, established for both Si:As and Si:P (from earlier data), can be explained as a simple extension of the Elliot-Yafet mechanism for conduction-electron spin-resonance linewidths. The strong donor dependence of $B$ is satisfactorily explained with impurity spin-orbit interaction parameters obtained from Orbach spin-lattice relaxation studies.
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