Abstract
Gallium nitride (GaN) thin films doped with Fe ions (GaN:Fe) become semi-insulation substrates which are needed to fabricate high frequency devices. Recent development of crystal growth methods enables us to make high quality and high resistivity substrates of the GaN:Fe. In order to examine magnetic properties of Fe ions in the GaN:Fe film, we have performed ESR measurements. Observed ESR signals have been successfully analyzed with a spin Hamiltonian given by considering a symmetry of the local Ga site ( C 3 v ) replaced by Fe and assuming Fe 3 + ions ( S = 5 2 ) . Consequently, we have confirmed that Ga ions in the thin film are partly substituted by Fe 3 + ions
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