Abstract
Electron spin resonance (ESR) method was used to investigate defects produced in SIMOX by As + and B + ion implantation. Two kinds of paramagnetic defect centers were observed. One had a g-value of 2.0055 and Δ H pp= 7.0 Oe, due to a-center, which originated from Si dangling bonds at the amorphous layer. The other had a g-value of 2.0010 and Δ H pp=2.8 Oe, due to E′-center in the SiO 2 layer. These centers showed different annealing properties. The existence of an amorphous/crystalline layer at the top Si layer plays an important role for the recrystallization mechanism. However, recrystallization at the moving crystalline layer by annealing depends highly on the ion species as well as the implantation energy.
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